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| EMP110 UPDATED 12/15/2004 5.9 - 7.9 GHz Power Amplifier MMIC FEATURES * * * * * * 5.9 - 7.9 GHz Operating Frequency Range 27.0dBm Output Power at 1dB Compression 19.0 dB Typical Small Signal Gain -41dBc OIMD3 @Each Tone Pout 17 dBm Point-to-point and point-to-multipoint radio Military Radar Systems Dimension: 1130um X 2250um Thickness: 85um + 15um APPLICATIONS Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Tb = 25 C, 50 ohm, Vds = 7 V, Idsq = 400 mA, Unless Otherwise Specified) SYMBOL F P1dB Gss OIMD3 Input RL Output RL Idss Vds NF Rth Tb SYMBOL Vds VGS Ids IGSF PIN TCH TSTG PT PARAMETER/TEST CONDITIONS Operating Frequency Range Output Power at 1dB Gain Compression Small Signal Gain Output 3rd Order Intermodulation Distortion @f=10MHz, Each Tone Pout 17dBm, 7V, 60%+10%Idss Input Return Loss Output Return Loss Saturated Drain Current Drain to Source Voltage Noise Figure @7GHz Thermal Resistance (Au-Sn Eutectic Attach) Operating Base Plate Temperature 1,2 MIN 5.9 26.0 16.0 TYP MAX 7.9 UNITS GHz dBm dB 27.0 19.0 -41 -12 -6 -38 -8 dBc dB dB Vds =3V, VGS =0V 490 570 7 7 22 660 8 mA V dB o C/W C - 35 ABSOLUTE 12V -8V Idss 57mA 24dBm 175C -65/175C 6.2W CONTINUOUS 8V -4V 650mA 9.5 mA @ 3dB compression 150C -65/150C 5.2W + 85 MAXIMUM RATINGS AT 25C Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation CHARACTERISTIC 1. Operating the device beyond any of the above rating may result in permanent damage. 2. Bias conditions must also satisfy the following equation Vds*Ids < (TCH -Tb)/RTH Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 3 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised December 2004 EMP110 UPDATED 12/15/2004 5.9 - 7.9 GHz Power Amplifier MMIC Typical Performance: 1. Small Signal Performance (@7V, 400mA) EMP110 Small Signal Performance 25 20 15 10 5 0 -5 -10 -15 -20 -25 4 DB(|S[2,1]|) * DB(|S[1,1]|) * DB(|S[2,2]|) * 6 8 Frequency (GHz) 10 2. OIMD VS Pout @7V, 400mA 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 0 5 10 15 20 (@8GHz, f=10MHz) 3. P-1 VS Vds @Idsq=400mA EMP110 P1dB(dBm) vs. Vds 30 29 28 27 dBm EMP110 OIMD (dBc) vs. Pout(dBm) OIMD (dBc) OIMD3 OIMD5 26 25 24 23 22 Vds=7V Vds=5V 25 5 6 7 Frequency (GHz) 8 9 Each Tone Pout (dBm) APPLICATION INFORMATION (CAUTION: THIS IS AN ESD SENSITIVE DEVICE) Chip carrier should match GaAs thermal coefficienat of expansion and have high thermal conductivity, such as copper tungsten or copper molybdenum. The chip carrier should be nickel-gold plated and capable of withstanding 325C for 20 minutes. Die attach should be done with Gold/Tin (80/20) eutectic alloy in inert ambient gas. The backside is used as heatsinking, DC, and RF contacts. All die attach and wire bond equipment, especially the tools which touch a die, should be well grounded to avoid accidental discharge through a die. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 2 of 3 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised December 2004 EMP110 UPDATED 12/15/2004 5.9 - 7.9 GHz Power Amplifier MMIC ASSEMBLY DRAWING The length of RF wires should be as short as possible. Use at least two wires between RF pad and 50 ohm line and separate the wires to minimize the mutual inductance. CHIP OUTLINE Chip Size 1130 x 2250 microns Chip Thickness: 85 15 microns PAD Dimensions: 100 x 100 microns All Dimensions in Microns Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 3 of 3 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised December 2004 |
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